Ultra Long-term Measurement Results of BTI-induced Aging Degradation on 7-nm Ring Oscillators
Author:
Affiliation:
1. Kyoto Institute of Technology,Dept. of Electronics,Kyoto,Japan
2. Renesas Electronics Corporation,Tokyo,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117873.pdf?arnumber=10117873
Reference14 articles.
1. The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps
2. Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review
3. Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
4. Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
5. On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI
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