A Physical Unclonable Function Leveraging Hot Carrier Injection Aging-Reference-Cited by-同舟云学术

A Physical Unclonable Function Leveraging Hot Carrier Injection Aging

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Parker Rachael J.¹,Velamala Jyothi Bhaskarr A.¹,Shen Kuan-Yueh James¹,Johnston David¹,Chang Yao-Feng²,Ramey Stephen M.²,Wu Siang-Jhih Sean³,Penmatsa Padma³

Affiliation:

1. Intel Corporation,Design Engineering Group,Hillsboro,OR,U.S.A

2. Logic Technology Development Quality & Reliability, Intel Corporation,Hillsboro,OR,U.S.A

3. Manufacturing and Product Engineering, Intel Corporation,Folsom,CA,U.S.A

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118128.pdf?arnumber=10118128

Reference16 articles.

1. Self-heating effect in FinFETs and its impact on devices reliability characterization

2. The Impact of Self-Heating on HCI Reliability in High-Performance Digital Circuits

3. Transistor aging and reliability in 14nm tri-gate technology

4. A 0.5-V 2.07-fJ/b 497-F2 EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in

5. Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology

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