SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation-Reference-Cited by-同舟云学术

SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Schwabe Christian¹,Liu Xing¹,Wassermann Tobias N.²,Salmen Paul²,Basler Thomas¹

Affiliation:

1. Chemnitz University of Technology,Professorship of Power Electronics,Chemnitz,Germany

2. Infineon Technologies AG,Warstein,Germany,59581

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118274.pdf?arnumber=10118274

Reference15 articles.

1. AC-Stress Degradation and Its Anneal in SiC MOSFETs

2. Investigation of the threshold voltage shift of SiC MOSFETs during power cycling tests;kempiak;Proc of PCIM Europe,2020

3. Qualifying a Silicon Carbide Power Module: Reliability Testing Beyond the Standards of Silicon Devices;salmen;International Conference on Integrated Power Electronics Systems,2022

4. Impact of Threshold Voltage Instabilities of SiC MOSFETs on the Methodology of Power Cycling Tests;kempiak;Proc of PCIM,2021

5. Guideline for evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion;JEDEC JEP 184,2021

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests;Solid State Phenomena;2024-08-26

2. Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04