Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences-Reference-Cited by-同舟云学术

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Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences

Published:2023-09-04 Issue: Volume: Page:
ISSN:
Container-title:2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
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Author:

Heimler Patrick¹,Alaluss Mohamed¹,Schwabe Christian¹,Liu Xing¹,Lutz Josef¹,Basler Thomas¹

Affiliation:

1. Chemnitz University of Technology,Chemnitz,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264579.pdf?arnumber=10264579

Reference13 articles.

1. Some aspects in lifetime prediction of power semiconductor devices;zeng;PhD thesis Universitätsverlag Chemnitz,2019

2. SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation

3. Transient Thermal Response Measurements of Power Transistors

4. Silizium- und SiC-leistungsdioden unter besonderer berücksichtigung von elektrisch-thermischen kopplungseffekten und nichtlinearer dynamik;felsl;Ph D dissertation Faculty of Elec and Info Engineering TU Chemnitz,2009

5. Semiconductor Power Devices - Physics;lutz;Characteristics Reliability,2018

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