Effect of Frequency on Reliability Of High-K MIM Capacitors
Author:
Affiliation:
1. STMicroelectronics,Technology R&D,Crolles,France,38926
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117790.pdf?arnumber=10117790
Reference15 articles.
1. Investigation of the Endurance of FE-Hfo2 Devices by Means of TDDB Studies;florent;IEEE IRPS,2018
2. A new TDDB lifetime bi-model for eDRAM MIM capacitor with ZrO2 high-k dielectrics
3. Prediction of dielectric reliability from I–V characteristics: Poole–Frenkel conduction mechanism leading to √E model for silicon nitride MIM capacitor
4. A new model for dielectric breakdown mechanism of silicon nitride metal-insulator-metal structures
5. CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond
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