Impact of ballast resistor implementations on power performance of SiGe power HBTs-Reference-Cited by-同舟云学术

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Impact of ballast resistor implementations on power performance of SiGe power HBTs

Published: Issue: Volume: Page:
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Container-title:Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.
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Author:

Ningyue Jiang ,Zhenqiang Ma ,Pingxi Ma ,Reddy V.,Racanelli M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10419/33084/01555250.pdf?arnumber=1555250

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study;Microelectronics Reliability;2024-04

2. Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05

3. Ballast Resistor Temperature Effect and Ruggedness;2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS);2019-11

4. Improved Thermal Stability of RF Power BJT with Ballast Circuits;Frequenz;2013-01-01

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