Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs-Reference-Cited by-同舟云学术

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Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs

Published:2021-12-05 Issue: Volume: Page:
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Container-title:2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Lee Harrison P.,Teng Jeffrey W.,Sepulveda-Ramos Nelson,Cressler John D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682470.pdf?arnumber=9682470

Reference13 articles.

1. Theoretical analysis and modeling of bipolar transistor operation under reversal base current conditions

2. A wide-band ultralinear amplifier from 3 to 300 MHz

3. A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels

4. On the use of vertical superjunction collectors for enhanced breakdown performance in SiGe HBTs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

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