Analytical formulation and electrical measurements of self-heating in silicon BJT's-Reference-Cited by-同舟云学术

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Analytical formulation and electrical measurements of self-heating in silicon BJT's

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Container-title:Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
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Author:

Nenadovic N.,d'Alessandro V.,Nanver L.K.,Rinaldi N.,Schellevis H.,Slotboom J.W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8083/22351/01042879.pdf?arnumber=1042879

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Equivalent circuit model for thermal resistance of deep trench isolated bipolar transistors;2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM);2010-10

2. An investigation of electro-thermal instabilities in 150 GHz SiGe HBTs fabricated on SOI;2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM);2010-10

3. Reliability analysis and modeling of power MOSFETs in the 42-V-PowerNet;IEEE Transactions on Power Electronics;2006-05

4. A Back-Wafer Contacted Silicon-On-Glass Integrated Bipolar Process—Part II: A Novel Analysis of Thermal Breakdown;IEEE Transactions on Electron Devices;2004-01

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