An effect of source/drain spacing in AlGaN/GaN HEMT on linearity to improve device reliability-Reference-Cited by-同舟云学术

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An effect of source/drain spacing in AlGaN/GaN HEMT on linearity to improve device reliability

Published:2020-11-26 Issue: Volume: Page:
ISSN:
Container-title:2020 5th IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Kaushik Pragyey Kumar¹,Singh Sankalp Kumar²,Gupta Ankur¹,Basu Ananjan¹

Affiliation:

1. Indian Institute of Technology Delhi,Hauz Khas New Delhi,India,110016

2. International College of Semiconductor Technology, National Chiao Tung University,Hsinchu,Taiwan,300

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9776592/9776648/09776708.pdf?arnumber=9776708

Reference15 articles.

1. Dual-material gate (DMG) field effect transistor

2. DC Extraction of Gate Bias-Dependent Parasitic Resistances and Channel Mobility in an HEMT

3. RF-CMOS performance trends

4. RF linearity characteristics of SiGe HBTs

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