TCAD Based Reliability Assessment of Recess Gate AlGaN/GaN HEMT with Negative Gate Bias Induced Stress-Reference-Cited by-同舟云学术

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TCAD Based Reliability Assessment of Recess Gate AlGaN/GaN HEMT with Negative Gate Bias Induced Stress

Published:2020-11-26 Issue: Volume: Page:
ISSN:
Container-title:2020 5th IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Kumari Vandana¹,Nayak Amrutamayee²,Sehra Khushwant³,Gupta Mridula⁴,Saxena Manoj⁵

Affiliation:

1. Maharaja Agrasen College, University of Delhi,Dept. of Electronics,New Delhi,India

2. National Institute of Science and Technology,Electrical Engineering Dept.,Berhampur,India

3. University of Delhi,Department of Electronic Science,New Delhi,India

4. University of Delhi,Department of Electronic Science,India

5. Deen Dayal Upadhyaya College, Uninversity of Delhi,Department of Electronics,India

Funder

University of Delhi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9776592/9776648/09777048.pdf?arnumber=9777048

Reference17 articles.

1. Effects of TMAH Treatment on Device Performance of Normally Off Al2O3/GaN MOSFET;ki-won;IEEE Electron Device Letters,2011

2. Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability

3. Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain

4. AlGaN/GaN HEMTs on Silicon With Hybrid Schottky-Ohmic Drain for High Breakdown Voltage and Low Leakage Current;yi-wei;IEEE Electron Device Letters,2012

5. Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance

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