Performance evaluation of DG-MOSFETs and DG-TFETs with Ferroelectric insulation layer-Reference-Cited by-同舟云学术

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Performance evaluation of DG-MOSFETs and DG-TFETs with Ferroelectric insulation layer

Published:2020-11-26 Issue: Volume: Page:
ISSN:
Container-title:2020 5th IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Kumar Reshma S¹,Narang Rakhi²,Gupta Mridula³,Saxena Manoj⁴

Affiliation:

1. Delhi Technological University,Department of Electronics and Communication Engineering,Delhi,India

2. Sri Venkateswara College, University of Delhi,Delhi,India

3. University of Delhi,Department of Electronic Science,Delhi,India

4. Deen Dayal Upadhyaya College, University of Delhi,Delhi,India

Funder

University of Delhi

Delhi Technological University

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9776592/9776648/09777088.pdf?arnumber=9777088

Reference12 articles.

1. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

2. Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack

3. Dopingless ferroelectric tunnel FET architecture for the improvement of performance of dopingless n-channel tunnel FETs

4. Landau-Khalatnikov simulations for ferroelectric switching in ferroelectric random-access memory application;song;J Korean Phys Soc,2005

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