Ultra-thin and High-quality Pt-Silicidation using CW Laser Annealing Process-Reference-Cited by-同舟云学术

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Ultra-thin and High-quality Pt-Silicidation using CW Laser Annealing Process

Published:2024-04-22 Issue: Volume:281 Page:1-2
ISSN:
Container-title:2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
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Author:

Kim Seung Mo¹,Kwon Min Gyu²,Woo Taekyu¹,Kim Ki Sung¹,Lee Yongsu¹,Hwang Hyeon Jun¹,Kim Joon¹,Lee Byoung Hun¹

Affiliation:

1. Pohang University of Science and Technology,Center for Semiconductor Technology Convergence,Department of Electrical Engineering,Gyeongsangbuk-do,Republic of Korea,37673

2. School of Materials Science and Engineering, Gwangju Institute of Science and Technology,Gwangju,Republic of Korea,61005

Funder

National Research Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10546337/10546338/10546397.pdf?arnumber=10546397

Reference4 articles.

1. Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation

2. Formation of platinum-based silicide contacts: Kinetics, stoichiometry, and current drive capabilities

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