Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits-Reference-Cited by-同舟云学术

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Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

Published:1987-12 Issue:12 Volume:34 Page:2571-2579
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Asbeck P.M.,Chang M.F.,Wang K.-C.,Miller D.L.,Sullivan G.J.,Sheng N.H.,Sovero E.,Higgins J.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31984/01487067.pdf?arnumber=1487067

Cited by 85 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Abrupt Lateral-Source Heterostructures with Relaxed/Strained Layers for Ballistic Complementary Metal Oxide Semiconductor Transistors Fabricated by Local O+Ion-Induced Relaxation Technique of Strained Substrates;Japanese Journal of Applied Physics;2011-04-20

2. Abrupt Lateral-Source Heterostructures with Relaxed/Strained Layers for Ballistic Complementary Metal Oxide Semiconductor Transistors Fabricated by Local O+Ion-Induced Relaxation Technique of Strained Substrates;Japanese Journal of Applied Physics;2011-04-01

3. Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors;Key Engineering Materials;2011-02

4. Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature;Japanese Journal of Applied Physics;2011-01-20

5. Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature;Japanese Journal of Applied Physics;2011-01-01

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