Vectorized Monte Carlo calculation for the transport of ions in amorphous targets

Author:

Petersen W.P.,Fichtner W.,Grosse E.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A fringing field dependent 2-D model for non-uniformly doped short channel MOSFETs;International Journal of Electronics;1999-04

2. Frequency optimization of Si MESFET model with Pearson distribution (FMA);International Journal of Electronics;1998-02

3. A Fuzzy Method to Optimize the Performance of Si d-MESFETs: Influence of Pearson Profile;IETE Technical Review;1998-01

4. Generating ion implantation profiles in one and two dimensions. 1: density functions;Journal of Physics D: Applied Physics;1996-05-14

5. Range Distribution;Ion Implantation: Basics to Device Fabrication;1995

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