A high-performance high-voltage self-aligned double-diffused lateral (SADDL) p-n-p transistor-Reference-Cited by-同舟云学术

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A high-performance high-voltage self-aligned double-diffused lateral (SADDL) p-n-p transistor

Published:1986-01 Issue:1 Volume:33 Page:23-27
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sugawara Y.,Kamei T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31948/01485648.pdf?arnumber=1485648

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric Isolation Technologies and Power ICs;Smart Power ICs;2002

2. Effect of ohmic contact conductance on the distribution of surface and bulk currents in semiconductor planar devices;Journal of Applied Physics;1992-08-15

3. Lateral pnp Transistor Models;Computational Microelectronics;1990

4. High-gain lateral pnp bipolar transistors made using focused ion beam implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-05

5. 350-V analog-digital compatible power IC's using dielectrically isolated substrates;IEEE Transactions on Electron Devices;1986-12

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