Measurement of recombination lifetime profiles in epilayers using a conductivity modulation technique
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31931/01484930.pdf?arnumber=1484930
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Experimental measurement of in-depth secondary defects distribution produced by helium implantation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
2. All electrical resistivity profiling technique for ion implanted semiconductor materials;Materials Science and Engineering: B;2005-12
3. Response to “Comment on ‘Minority Carrier Lifetime Measurements in Epitaxial Silicon Layers’” [T. Hara, F. Tamura, and T. Kitamura (pp. L54–L57, Vol. 144, No. 4, 1997)];Journal of The Electrochemical Society;1998-06-01
4. Interferometric measurement of electron-hole pair recombination lifetime as a function of the injection level;IEEE Electron Device Letters;1993-10
5. Characteristics of Silicon Photodetector Using Epitaxial Wafer with High Resistivity and Long Recombination Lifetime;MRS Proceedings;1993
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