Experimental measurement of in-depth secondary defects distribution produced by helium implantation in silicon-Reference-Cited by-同舟云学术

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Experimental measurement of in-depth secondary defects distribution produced by helium implantation in silicon

Published:2006-12 Issue:1-2 Volume:253 Page:90-93
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Daliento S.,Mele L.,Spirito P.,Gialanella L.,Limata B.N.,Romano M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. J.Vobecky, P. Hazdra, J. Voves, F. Spurny, J. Homola, in: Proc. of ISPSD Davos, 31 May–2 June 1994.

2. www.srim.org.

3. Measurement of recombination lifetime profiles in epilayers using a conductivity modulation technique

4. Semiconductor Material and Device Characterization;Schroder,1990

5. Recombination centers identification in very thin silicon epitaxial layers via lifetime measurements

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