High-temperature silicon carbide and silicon on insulator based integrated power modules-Reference-Cited by-同舟云学术

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High-temperature silicon carbide and silicon on insulator based integrated power modules

Published:2009-09 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE Vehicle Power and Propulsion Conference
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Author:

Lostetter A.,Hornberger J.,McPherson B.,Reese B.,Shaw R.,Schupbach M.,Rowden B.,Mantooth A.,Balda J.,Otsuka T.,Okumura K.,Miura M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5281780/5289440/05289735.pdf?arnumber=5289735

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The National Center for Reliable Electric Power Transmission Test Facility;IEEE Open Journal of Power Electronics;2024

2. Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

3. Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective;Journal of Physics D: Applied Physics;2023-02-16

4. Review of High-Temperature Power Electronics Converters;IEEE Transactions on Power Electronics;2022-12

5. A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module;2022 20th IEEE Interregional NEWCAS Conference (NEWCAS);2022-06-19

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