TCAD Evaluation of the Active Substrate Bias Effect on the Charge Transport of Ω-Gate Nanowire MOS Transistors With Ultra-Thin BOX
Author:
Affiliation:
1. Department of Electrical Engineering, Centro Universitário FEI, São Bernardo do Campo, Brazil
Funder
CNPq
CAPES (Coordenação de Aperfeiçoamento de Pessoal de Nível Superior Brasil
São Paulo Research Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/9714452/09684572.pdf?arnumber=9684572
Reference20 articles.
1. Impact of back biasing on carrier transport in ultra-thin-body and BOX (UTBB) Fully Depleted SOI MOSFETs
2. Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model
3. Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETs
4. Impact of substrate bias on the mobility of n-type $\Omega$ -gate SOI nanowire MOSFETs;bergamaschi;Proc 34th Symp Microelectron Technol Devices (SBMicro),2019
5. TCAD evaluation of the substrate bias influence on the carrier transport of $\Omega$ -gate nanowire MOS transistors with ultra-thin BOX;bergamaschi;Proc Latin America Electron Devices Conf (LAEDC),2021
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