Physics-Based Analytical Channel Charge Model of In x Ga1-x As/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes-Reference-Cited by-同舟云学术

Physics-Based Analytical Channel Charge Model of In _x Ga_1-xAs/In_0.52Al_0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

Published:2022 Issue: Volume:10 Page:387-396
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Jeong Hyeon-Seok¹^ORCID,Park Wan-Soo¹^ORCID,Jo Hyeon-Bhin¹^ORCID,Lee In-Geun¹^ORCID,Kim Tae-Woo²^ORCID,Tsutsumi Takuya³^ORCID,Sugiyama Hiroki³^ORCID,Matsuzaki Hideaki³^ORCID,Hahm Sung-Ho¹^ORCID,Lee Jae-Hak¹,Kim Dae-Hyun¹^ORCID

Affiliation:

1. School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea

2. Electrical Engineering Department, University of Ulsan, Ulsan, South Korea

3. NTT Device Technology Laboratories, Kanagawa, Japan

Funder

Civil-Military Technology Cooperation Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09770423.pdf?arnumber=9770423

Reference34 articles.

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4. Quantum capacitance in scaled down III–V FETs;jin;Proc IEEE Int Electron Devices Meeting (IEDM),2009

5. Virtual Source based I-V Model for Cryogenic CMOS Devices

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