A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing-Reference-Cited by-同舟云学术

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing

Published:2022 Issue: Volume:10 Page:706-711
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Chen Jiajia¹,Liu Huan¹,Jin Chengji¹^ORCID,Jia Xiaole¹,Yu Xiao¹^ORCID,Peng Yue²,Cheng Ran³^ORCID,Chen Bing³^ORCID,Liu Yan²^ORCID,Hao Yue²^ORCID,Han Genquan²^ORCID

Affiliation:

1. Research Center for Intelligent Chips and Devices, Zhejiang Lab, Hangzhou, China

2. School of Microelectronics, Xidian University, Xi’an, China

3. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China

Funder

National Key Research and Development Project

National Natural Science Foundation of China

Major Scientific Research Project of Zhejiang Lab

Zhejiang Province Key Research and Development Programs

Zhejiang Provincial Natural Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09870168.pdf?arnumber=9870168

Reference24 articles.

1. Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide

2. Electrical characteristic of atomic layer deposition La2O3/Si MOSFETs with ferroelectric-type hysteresis

3. Impact of Oxygen Vacancy Content in Ferroelectric HZO films on the Device Performance

4. Deep Insights into the Failure Mechanisms in Field-cycled Ferroelectric Hf0.5Zr0.5O2 Thin Film: TDDB Characterizations and First-Principles Calculations

5. Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET

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1. Progress on the program of Si-compatible two-dimensional semiconductor materials and devices;Science China Information Sciences;2024-05-21

2. Effect of Mobile Ions on Subthreshold Swing of HfO₂-based Ferroelectric Field-Effect Transistors;2023 International Conference on IC Design and Technology (ICICDT);2023-09-25

3. Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics;Science China Information Sciences;2023-08-31

4. Controlling the Ferroelectricity of Doped-HfO₂ via Reversible Migration of Oxygen Vacancy;IEEE Transactions on Electron Devices;2023-04

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