High Temperature Reverse Bias (HTRB) & Temperature Humidity Bias (THB) Reliability Failure Mechanisms and Improvements in Trench Power MOSFET and IGBT-Reference-Cited by-同舟云学术

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High Temperature Reverse Bias (HTRB) & Temperature Humidity Bias (THB) Reliability Failure Mechanisms and Improvements in Trench Power MOSFET and IGBT

Published:2021 Issue: Volume:9 Page:1181-1187
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Ooi Ai Loon,Goh David^ORCID,Ngwan Voon Cheng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9359727/09526865.pdf?arnumber=9526865

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comprehensive Overview of Reliability Assessment Strategies and Testing of Power Electronics Converters;IEEE Open Journal of Power Electronics;2024

2. Humidity related failure mechanism of IGBTs considering dynamic avalanche;Microelectronics Reliability;2023-12

3. Influence of EMC Tg on Leakage Current in HTRB Test and Delamination in MSL Test for Power Package;2023 IEEE CPMT Symposium Japan (ICSJ);2023-11-15

4. Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer;Microelectronics Journal;2021-12

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