A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT-Reference-Cited by-同舟云学术

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

Published:2020 Issue: Volume:8 Page:905-910
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Gao Rui^ORCID,Shi Yijun^ORCID,He Zhiyuan^ORCID,Chen Yiqiang^ORCID,En Yunfei^ORCID,Huang Yun,Ji Zhigang^ORCID,Zhang Jianfu^ORCID,Zhang Weidong^ORCID,Zheng Xuefeng,Zhang Jinfeng^ORCID,Liu Yang

Funder

Natural Science Foundation of Guangdong Province

Key Area Research and Development Program of Guangdong Province

Guangzhou Science and Technology Plan Project

Key-Area Research and Development Program of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8949832/09165722.pdf?arnumber=9165722

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3. Electrical properties of Cu/Pd2Si Schottky contacts to AlGaN/GaN-on-Si HEMT heterostructures;Materials Science in Semiconductor Processing;2023-01

4. Evaluation of the border traps in LPCVD Si₃N₄/GaN/AlGaN/GaN MIS structure with long time constant using quasi-static capacitance voltage method;Japanese Journal of Applied Physics;2022-06-17

5. A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors;Scientific Reports;2021-11-17