SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology-Reference-Cited by-同舟云学术

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

Published:2022 Issue: Volume:10 Page:129-138
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Liu Tianshi¹^ORCID,Zhang Hua¹^ORCID,Isukapati Sundar Babu²^ORCID,Ashik Emran³,Morgan Adam J.²,Lee Bongmook³^ORCID,Sung Woongje²^ORCID,Fayed Ayman¹^ORCID,White Marvin H.¹,Agarwal Anant K.¹^ORCID

Affiliation:

1. Department of Electrical & Computer Engineering, The Ohio State University, Columbus, OH, USA

2. College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY, USA

3. Department of Electrical & Computer Engineering, North Carolina State University, Raleigh, NC, USA

Funder

Advanced Research Projects Agency-Energy (ARPA-E) U.S. Department of Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

https://ieeexplore.ieee.org/ielam/6245494/9714452/9709592-aam.pdf

Reference30 articles.

1. A SiC CMOS Linear Voltage Regulator for High-Temperature Applications

2. High-Temperature Voltage and Current References in Silicon Carbide CMOS

3. Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications

4. 555-Timer and Comparators Operational at 500 °C

5. Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Quasi-Floating Channel-Based SPICE Model for Improving the Modeling Accuracy of SiC MOSFETs With Multiple Device Structures;IEEE Transactions on Power Electronics;2024-11

2. A 4H-SiC CMOS SPICE Level 3 Model for Circuit Simulations;IEEE Electron Device Letters;2024-08

3. A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25–600 V mixed-mode SiC CMOS technology;Analog Integrated Circuits and Signal Processing;2024-04-23

4. Study on the mechanism of glass-SiC-glass anodic bonding process;Journal of Micromechanics and Microengineering;2024-03-28

5. A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18