Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors-Reference-Cited by-同舟云学术

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Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

Published:2024 Issue: Volume:12 Page:569-572
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Park Chinsung¹^ORCID,Ravindran Prasanna Venkat¹^ORCID,Das Dipjyoti²,Ravikumar Priyankka Gundlapudi¹,Zhang Chengyang¹^ORCID,Afroze Nashrah¹,Fernandes Lance¹^ORCID,Kuo Yu Hsin¹^ORCID,Hur Jae³^ORCID,Chen Hang¹,Tian Mengkun¹,Chern Winston¹,Yu Shimeng¹^ORCID,Khan Asif Islam¹

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

2. School of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, India

3. Logic Technology Development, Intel Corporation, Hillsboro, OR, USA

Funder

Semiconductor Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/6245494/10416702/10612817.pdf?arnumber=10612817

Reference26 articles.

1. Ferroelectricity in hafnium oxide thin films

2. The Past, the Present, and the Future of Ferroelectric Memories

3. The future of ferroelectric field-effect transistor technology

4. Ferroelectric Field Effect Transistors for Memory Applications

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