Selector-Free Cross-Point Memory Architecture Based on Ferroelectric MFM Capacitors
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8733385/8739248/08739707.pdf?arnumber=8739707
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAM;IEEE Transactions on Electron Devices;2024-05
2. Demonstration of 10 nm Ferroelectric Al0.7Sc0.3N-Based Capacitors for Enabling Selector-Free Memory Array;Materials;2024-01-27
3. Capacitor-Based Synaptic Devices for Hardware Spiking Neural Networks;IEEE Electron Device Letters;2022-04
4. Ferroelectric-based Accelerators for Computationally Hard Problems;Proceedings of the 2021 on Great Lakes Symposium on VLSI;2021-06-22
5. Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf0.5Zr0.5O₂ Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory;IEEE Journal of the Electron Devices Society;2020
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