GaAs pHEMT-based technology for microwave applications in a volume MMIC production environment on 150-mm wafers

Author:

O'Keefe M.F.,Atherton J.S.,Bosch W.,Burgess P.,Cameron N.I.,Snowden C.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors;Journal of Applied Physics;2024-01-08

2. Failure Analysis of RF VGA in Base Station System and GaAs HBT Process Improvement;2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2023-07-24

3. Optical high-resolution image-based defect inspection on compound semiconductors;2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM);2023-05

4. Low cost X-band power amplifler MMIC;IEEE Aerospace and Electronic Systems Magazine;2006-03

5. III-V Semiconductors;Encyclopedia of RF and Microwave Engineering;2005-04-15

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