AlGaN/GaN based HEMT with AIN Spacer And Nucleation Layer For High Power Application
Author:
Affiliation:
1. Chtrapati Shivaji Maharaj University,Department of Electrical and Electronics Engg dept,Panvel,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10134754/10134560/10134564.pdf?arnumber=10134564
Reference19 articles.
1. The Impact of AlGaN Barrier on Transient VTH Shifts and VTH Hysteresis in Depletion and Enhancement mode AlGaN/GaN MIS-HEMTs
2. Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length
3. Analysis of AlGaN/GaN HEMT using Discrete Field plate technique for High Power and High Frequency Applications;fletcher;AEU -International Journal of Electronics and Communications,2018
4. Study on Harmonic Spur Characteristics of AlGaN/GaN HEMT PA at Different Temperatures
5. Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier
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1. Characterization of trap evolution in GaN-based HEMTs under pulsed stress;Microelectronics Reliability;2024-01
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