Low noise, high linearity, wide bandwidth amplifier using a 0.35 μm SiGe BiCMOS for WLAN applications-Reference-Cited by-同舟云学术

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Low noise, high linearity, wide bandwidth amplifier using a 0.35 μm SiGe BiCMOS for WLAN applications

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Container-title:2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)
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Author:

Sadowy J.,Telliez I.,Graffeuil J.,Tournier E.,Escotte L.,Plana R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7899/21787/01012035.pdf?arnumber=1012035

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Temperature Compensated Amplifier;Advanced Materials Research;2013-09

2. A 5 GHz Low Noise Amplifier with On-Chip Transformer-Balun;2006 European Conference on Wireless Technologies;2006-09

3. An Ultra-Wideband and Low-Power Amplifier Using 0.35-μm SiGe BiCMOS Technology;2006 International Conference on Communications, Circuits and Systems;2006-06

4. A low supply voltage SiGe LNA for ultra-wideband frontends;IEEE Microwave and Wireless Components Letters;2004-10

5. SiGe based low noise amplifier for WLAN applications;Applied Surface Science;2004-03

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