A Novel Temperature Compensated Amplifier-Reference-Cited by-同舟云学术

A Novel Temperature Compensated Amplifier

Published:2013-09 Issue: Volume:756-759 Page:781-784
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Liu Cheng Peng¹,Shi Jian Gang¹,Wang Guo Qiang¹,He Zheng Rong¹

Affiliation:

1. China Electronics Technology Group Corporation

Abstract

A novel configuration for a novel temperature compensated amplifier is presented in this paper. This amplifier exhibits high performance including Return Loss is well blew-12dB from DC to 6GHz, At 3.1GHz, the typical gain is 14.1dB, noise figure is 3.0dB, 1dB compression point is 13.9dBm.with insensitivity to temperature.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.756-759.781.pdf

Reference10 articles.

1. C.T. Armijo R.G. Meyer, A new wide-band Darlington amplifier, Solid-State Circuits, IEEE Journal of vol. 24, Issue 4, pp.1105-1109, Aug (1989).

2. J. Sadowy etal., Low noise, high linearity, wide bandwidth amplifier using a 0. 35um SiGe BiCMOS for WLAN applications, in Proc. Radio Frequency Integrated Circuits (RFIC) symp., pp.217-220, Jun (2002).

3. MarkRodwell, JensenJF, StanchinaWE, etal. 33GHz Monolithic Cascode AlInAs/GaInAs Heterojunction Bipolar Transistor Feedback Amplifier[J]. Journal of Solid-State Circuits, 1991, 26(10): 1378-1382.

4. Mohd Fairuz Zakaria, Burhanuddin Yeop Majlis. 1-3GHz MMIC Amplifier Design for Transmit/ Receive Applications[ C ]/ /Proceedings of IEEE International Conference on Semiconductor Electronics. Malaysia: IEEE, 2000: 113-115.

5. SHEN Pei. An Ultra-Wideband Darlington Low Noise Amplifier Design Based on SiGe HBT,. Proceedings of ICMMT2008, 2008: pp.1372-1375.

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