Optimization of SiC device topologies for Single Event Immunity
Author:
Affiliation:
1. School of Engineering, University of Warwick,Coventry,UK
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9935821/9936047/09936145.pdf?arnumber=9936145
Reference12 articles.
1. Prototyping and Characterization of 1.2 KV SIC Schottky Diodes for TWTA Application: The Challenge to Meet the User Specification;maset;E3S Web of Conferences,2017
2. Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence
3. Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part II
4. Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs
5. Thermal damage in SiC Schottky diodes induced by SE heavy ions
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