Characterization for Sub-5nm Technology Nodes of Junctionless Gate-All-Around Nanowire FETs

Author:

Sai Kumar Aruru1,Deekshana M.1,Bharath Sreenivasulu V.2,Prasad Somineni Rajendra1,Kanthi Sudha D.1

Affiliation:

1. VNR Vignana Jyothi Institute of Engineering and Technology,Department of ECE,Hyderabad,India

2. Vellore institute of technology,Department of SENSE,Chennai,India

Publisher

IEEE

Reference33 articles.

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2. DC and RF Performance Analysis of Junctionless Gate All Around Nanosheet MOSFET;2023 IEEE 9th International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE);2023-11-25

3. Design of Resistive Load Inverter and Common Source Amplifier Circuits Using Symmetric and Asymmetric Nanowire FETs;Journal of Electronic Materials;2023-08-21

4. Nanosheet Field Effect Transistor Device and Circuit Aspects for Future Technology Nodes;ECS Journal of Solid State Science and Technology;2023-08-01

5. High performance FIR Architecture for EOG Signal Noise Supression;2023 14th International Conference on Computing Communication and Networking Technologies (ICCCNT);2023-07-06

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