GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification-Reference-Cited by-同舟云学术

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GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

Published:2014-11 Issue:6 Volume:2 Page:168-173
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Li Liuan,Kishi Akinori,Liu Qiang,Itai Yuki,Fujihara Ryota,Ohno Yasuo,Ao Jin-Ping

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://ieeexplore.ieee.org/iel7/6245494/6935048/06874492.pdf

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Layer;IEEE Transactions on Electron Devices;2024-05

2. Extraction of device parameters from capacitance-voltage characteristics of p-GaN/AlGaN/GaN HEMT;Microelectronics Journal;2024-01

3. Cathodic arc deposition of nanocrystalline titanium nitride thin film on fluorine doped tin oxide coated glass substrate: Crystal structural, microstructural, mechanical, optical and electrical properties;Ceramics International;2023-12

4. An experimental study: Dependence of Schottky diode parameters on Schottky contact area size;Optical Materials;2023-08

5. Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications;physica status solidi (a);2023-04-05

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