Fabrication of a 4H-SiC p-i-n Diode Array for High Energy Particle Detection-Reference-Cited by-同舟云学术

Fabrication of a 4H-SiC p-i-n Diode Array for High Energy Particle Detection

Author:

Zhang Lin¹,Meng Ying-Hao¹,Li Jun-Tao¹,Zhang Ying¹^ORCID,Li Liang-Hui¹,Xu Xing-Liang¹

Affiliation:

1. Microsystem and Terahertz Research Center, Institute of Electronic Engineering, China Academy of Engineering Physics, Chengdu, China

Funder

State Key Laboratory of Nuclear Physics and Technology-Peking University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

Reference29 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Neutron irradiation and polarization effect of 4H–SiC Schottky detector;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-07

2. Prediction of JTE breakdown performance in SiC PiN diode radiation detectors using TCAD augmented machine learning;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-04