Prediction of JTE breakdown performance in SiC PiN diode radiation detectors using TCAD augmented machine learning-Reference-Cited by-同舟云学术

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Prediction of JTE breakdown performance in SiC PiN diode radiation detectors using TCAD augmented machine learning

Published:2024-04 Issue: Volume:1061 Page:169102
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Lin Lan,Wang Xiu-ku,Hu Jian

Publisher

Elsevier BV

Reference22 articles.

1. Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays;Nava;Nucl. Instrum. Methods Phys. Res. Sect. A Accel. Spectrom. Detect. Assoc. Equip.,2003

2. Fast neutron detection with 4H-SiC based diode detector up to 500 °C ambient temperature;Szalkai;IEEE Trans. Nucl. Sci.,2016

3. The fabrication and characterization of Ni/4H-SiC Schottky diode radiation detectors with a sensitive area of up to 4 cm2;Liu;Sensors,2017

4. Fabrication of a 4H-SiC pin diode array for high energy particle detection;Zhang;IEEE Trans. Nucl. Sci.,2022

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