Demonstration of Fundamental Characteristics for Power Switching Application in Planer Type E-mode MOS-HEMT Using Normally Depleted AlGaN GaN Epitaxial Layer On Si Substrate-Reference-Cited by-同舟云学术

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Demonstration of Fundamental Characteristics for Power Switching Application in Planer Type E-mode MOS-HEMT Using Normally Depleted AlGaN GaN Epitaxial Layer On Si Substrate

Published:2023-05-28 Issue: Volume: Page:
ISSN:
Container-title:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Nanjo T.¹,Yamamoto S.¹,Imazawa T.¹,Kiyoi A.¹,Shinagawa T.¹,Watahiki T.¹,Miura N.¹,Furuhashi M.¹,Nishikawa K.¹,Egawa T.²

Affiliation:

1. Advanced technology R&D center, Mitsubishi Electric Corporation,Amagasaki,Hyogo,Japan

2. Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Inst. of Tech.,Nagoya,Aichi,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147503.pdf?arnumber=10147503

Reference17 articles.

1. Design and demonstration of EID MOS-HEMTs on Si substrate with normally depleted AlGaN/GaN epitaxial layer

2. The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

3. Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO 2 deposition and subsequent high‐temperature annealing

4. Investigation of post-annealing effects for normally-off GaN metal-oxide semiconductor heterojunction field-effect transistors with thin AlN barrier layer

5. GaN n- and p-type Schottky diodes: Effect of dry etch damage

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