Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO 2 deposition and subsequent high‐temperature annealing
Author:
Affiliation:
1. The Advanced Technology R&D Center Mitsubishi Electric Corporation Amagasaki Hyogo Japan
2. High Frequency & Optical Device Works Mitsubishi Electric Corporation Itami Hyogo Japan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/ell2.12213
Reference12 articles.
1. Yamasaki T. et al.:A 68% efficiency C‐band 100W GaN power amplifier for space applications. In: 2010IEEE MTT‐S International Microwave Symposium pp.1384–1387.Anaheim CA(2010)
2. GaN high electron mobility transistors for sub‐millimeter wave applications;Lee D.S.;Jpn. J. Appl. Phys.,2014
3. GaN transistors on Si for switching and high‐frequency applications;Ueda T.;Jpn. J. Appl. Phys.,2014
4. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics
5. Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high‐electron‐mobility transistors with Si‐ion‐implanted source/drain contacts;Nanjo T.;Jpn. J. Appl. Phys.,2011
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