A 600-V GaN Active Gate Driver with Level Shifter Common-Mode Noise Sensing for Built-in dV/dt Self-Adaptive Control-Reference-Cited by-同舟云学术

A 600-V GaN Active Gate Driver with Level Shifter Common-Mode Noise Sensing for Built-in dV/dt Self-Adaptive Control

Published:2023-05-28 Issue: Volume: Page:
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Container-title:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Liu Tianqi¹,Martins Rui P.¹,Lu Yan¹

Affiliation:

1. Institute of Microelectronics, DECE/FST, University of Macau,State Key Laboratory of Analog and Mixed-Signal VLSI,Macao,China,999078

Funder

National Natural Science Foundation of China

Macao Science and Technology Development Fund (FDCT)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147641.pdf?arnumber=10147641

Reference11 articles.

1. 33.1 A Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch with Temperature-compensated Fast Turn-on Technique for Improving Reliability

2. A 99%-efficiency I-M Hz 1.6-kW zero-voltage-switching boost converter using normally-off GaN power transistors and adaptive dead-time controlled gate drivers;xue;IEEE International Conference of Electron Devices and Solid-State Circuits,2013

3. Digital Slew Rate and S-Shape Control for Smart Power Switches to Reduce EMI Generation

4. Design and Characterization of a 10-MHz GaN Gate Driver Using On-Chip Feed-Forward Gaussian Switching Regulation for EMI Reduction

5. Design and implementation of EMI filter for high frequency (MHz) power converters

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