Research on Fast Simulation Method of Single Event Effect Based on Multi-point Injection Method-Reference-Cited by-同舟云学术

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Research on Fast Simulation Method of Single Event Effect Based on Multi-point Injection Method

Published:2023-05-24 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED)
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Author:

Zhang Xiaorui¹,Xu Changqing²,Liu Yi¹,Liao Jian¹,Liao Xinfang¹,Chen Dongdong¹,Yang Yintang¹

Affiliation:

1. Xidian University,School of Microelectronics,Laboratory of Digital IC and Space Application,Xi’an,Shaanxi 710071,China

2. Xidian University,Guangzhou Institute of Technology and the School of Microelectronics,Xi’an,Shaanxi 710071,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10389810/10390725/10390899.pdf?arnumber=10390899

Reference9 articles.

1. Heavy Ion, Proton, and Neutron Charge Deposition Analyses in Several Semiconductor Materials

2. Timing vulnerability factors of sequential elements in modern microprocessors

3. Analysis of advanced circuits for SET measurement

4. Statistical Method to Extract Radiation-Induced Multiple-Cell Upsets in SRAM-Based FPGAs

5. Analysis of Single-Event Effects in DDR3 and DDR3L SDRAMs Using Laser Testing and Monte-Carlo Simulations

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