Total Ionizing Dose Hardness Analysis of Transistors in Radiation-Hardened 0.18μm BCD Technology-Reference-Cited by-同舟云学术

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Total Ionizing Dose Hardness Analysis of Transistors in Radiation-Hardened 0.18μm BCD Technology

Published:2023-05-24 Issue: Volume:32 Page:1-4
ISSN:
Container-title:2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED)
language:
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Author:

Xie Rubin¹,Ding Bing²,Xu Sheng²,Zhou Xin³,Zhang Bo³,Qiao Ming³

Affiliation:

1. University of Electronic Science and Technology of China,School of Integrated Circuit Science and Engineering

2. The 58th Research Institute of China, Electronics Technology Group Corporation,Laboratory of Advanced Silicon Technology

3. University of Electronic Science and Technology of China,School of Integrated Circuit Science and Engineering,Chengdu,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10389810/10390725/10390847.pdf?arnumber=10390847

Reference9 articles.

1. A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors

2. Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications

3. Radiation Studies of Power LDMOS Devices for High Energy Physics Applications

4. Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation

5. Total ionizing dose hardness analysis of transistors in commercial 180 nm CMOS technology

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