Void Migration Kinetics in Fine Line Cu RDL under Electric Current Stressing and the Improvement of Electromigration Reliability by Polyimide Passivation-Reference-Cited by-同舟云学术

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Void Migration Kinetics in Fine Line Cu RDL under Electric Current Stressing and the Improvement of Electromigration Reliability by Polyimide Passivation

Published:2024-05-28 Issue: Volume: Page:576-580
ISSN:
Container-title:2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
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Author:

Huang Yen-Cheng¹,Tsai Min-Yan²,Lin Ting-Chun¹,Lin Yung-Sheng¹,Wang Chen-Chao³,Hung Chih-Pin⁴,Lin Kwang-Lung¹

Affiliation:

1. National Cheng Kung University,Department of Materials Science and Engineering,Tainan City,Taiwan

2. CRD, ASE Group,Product Characterization Division,Kaohsiung City,Taiwan

3. CRD, ASE Group,Product Design Division,Kaohsiung City,Taiwan

4. CRD, ASE Group,Product Characterization,Kaohsiung City,Taiwan

Funder

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10564841/10564831/10565176.pdf?arnumber=10565176

Reference11 articles.

1. Fan-Out Wafer-Level Packaging with highly flexible design capabilities

2. Development of High Density Fan Out Wafer Level Package (HD FOWLP) with Multi-layer Fine Pitch RDL for Mobile Applications

3. Electromigration Failure Study of a Fine-pitch 2μm/2μm L/S Cu Redistribution Line Embedded in Polyimide for Advanced High-density Fan-out Packaging

4. Electromigration in thin aluminum films on titanium nitride

5. Electromigration in thin-film interconnection lines: models, methods and results

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