A Microstructural Investigation of Sub-1 μm Copper Bonding Contact Structures in Die-to-Wafer Hybrid Bonding-Reference-Cited by-同舟云学术

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A Microstructural Investigation of Sub-1 μm Copper Bonding Contact Structures in Die-to-Wafer Hybrid Bonding

Published:2024-05-28 Issue: Volume: Page:1306-1311
ISSN:
Container-title:2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
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Author:

Al Zerey Sari¹,Cho Junghyun²,Yu Roy³,Sakuma Katsuyuki³

Affiliation:

1. Binghamton University (State University of New York),Materials Science and Engineering Program,Binghamton,NY,USA,13902-4400

2. Binghamton University (State University of New York),Dept. of Mechanical Engineering and Materials Science and Engineering Program,Binghamton,NY,USA,13902-4400

3. IBM Research,Albany,NY,USA,12203

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10564841/10564831/10565052.pdf?arnumber=10565052

Reference9 articles.

1. Challenges in 3D Integration

2. Voids-free Die-level Cu/ILD Hybrid bonding

3. Vertical interconnects of microbumps in 3D integration

4. Plasma Activated Low-temperature Die-level Direct Bonding with Advanced Wafer Dicing Technologies for 3D Heterogeneous Integration

5. Mechanism of low-temperature copper-to-copper direct bonding for 3D TSV package interconnection

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