High Aspect Ratio (AR) Through Glass Via (TGV) Etch Performance on Glass Core Substrates for High Density 3D Advanced Packaging Applications-Reference-Cited by-同舟云学术

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High Aspect Ratio (AR) Through Glass Via (TGV) Etch Performance on Glass Core Substrates for High Density 3D Advanced Packaging Applications

Published:2024-05-28 Issue: Volume:21 Page:551-555
ISSN:
Container-title:2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
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Author:

Kim Sung Jin¹,Govindarajulu Venugopal²,Tao Coby²,Brar Aneelman²,Karim Zia³

Affiliation:

1. Absolics Inc.,Covington,Georgia,USA

2. Yield Engineering Systems,Chandler,Arizona,USA

3. Yield Engineering Systems,Fremont,California,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10564841/10564831/10565036.pdf?arnumber=10565036

Reference9 articles.

1. Processing Glass Substrate for Advanced Packaging using Laser Induced Deep Etching

2. Performance and Process Comparison between Glass and Si Interposer for 3D-IC Integration

3. Novel Method for High-Volume Via Formation in Solid-Core Glass for IC Substrates;Ostholt;Chip Scale Review,2017

4. Advancements in fabrication of glass interposers

5. Development of Through Glass Via (TGV) formation technology using electrical discharging for 2.5/3D integrated packaging

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