Non-TCB Process Cu/SiO<sub>2</sub> Hybrid Bonding Using Plasma-free Hydrophilicity Enhancement with NaOH for Chip-to-wafer Bonding-Reference-Cited by-同舟云学术

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Non-TCB Process Cu/SiO₂ Hybrid Bonding Using Plasma-free Hydrophilicity Enhancement with NaOH for Chip-to-wafer Bonding

Published:2024-05-28 Issue: Volume: Page:399-403
ISSN:
Container-title:2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
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Author:

Chen Yu-An¹,Ong Jia-Juen²,Chiu Wei-Lan³,Hsu Wei-You²,Yang Shih-Chi²,Chang Hsiang-Hung³,Chen Chih²

Affiliation:

1. National Yang Ming Chiao Tung University (NYCU),Institute of Pioneer Semiconductor Innovation,Hsinchu,Taiwan

2. National Chiao Tung University (NYCU),Department of Materials Science and Engineering,Hsinchu,Taiwan

3. Industrial Technology Research Institute (ITRI),Electronic and Optoelectronic System Research Laboratories,Hsinchu,Taiwan

Funder

Semiconductor Research Corporation

National Science and Technology Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10564841/10564831/10565254.pdf?arnumber=10565254

Reference16 articles.

1. Fifty Years of Moore's Law

2. The Quantum Limit to Moore's Law

3. Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

4. 3D integration: Applications and market trends

5. Integration schemes and enabling technologies for three-dimensional integrated circuits

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