Comparative Analysis of Different Materials for Gate-All-Around Nanowire FET-Reference-Cited by-同舟云学术

Comparative Analysis of Different Materials for Gate-All-Around Nanowire FET

Published:2022-05-09 Issue: Volume: Page:
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Container-title:2022 International Conference on Applied Artificial Intelligence and Computing (ICAAIC)
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Author:

Saleem Salman¹,Vimala P¹

Affiliation:

1. Electronics and communication engineering, Dayananda sagar college of engineering,Bengaluru,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9792618/9792586/09793002.pdf?arnumber=9793002

Reference15 articles.

1. TCAD Simulation Study of Single-, Double-, and Triple-Material Gate Engineered Trigate FinFETs

2. A new approach to the self-consistent solution of the Schrodinger-Poisson eauations in nanowire MOSFETs;gnani;Proc 30th Eur Solid-State Circuits Conf,0

3. Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects

4. An analytical drain current model for GS GAA MOSFET including interfacial traps

5. Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate

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1. Analysis of Transfer Characteristics for Nanowire Tunnel FET;2023 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT);2023-07-14

2. Design and Analysis of Dual Material Double Gate Tunnel-Field Effect Transistor (DMDG-TFET) with Gate Oxide Stack;2023 3rd International Conference on Intelligent Technologies (CONIT);2023-06-23

3. Silicon Nanowire and Carbon Nanotube MOSFET: A Simulation Study;2023 International Conference on Advances in Electronics, Communication, Computing and Intelligent Information Systems (ICAECIS);2023-04-19