Threshold Switch Assisted Memristive Memory with Enhanced Read Distinguishability-Reference-Cited by-同舟云学术

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Threshold Switch Assisted Memristive Memory with Enhanced Read Distinguishability

Published:2022-07-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 22nd International Conference on Nanotechnology (NANO)
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Author:

Alam Shamiul¹,Islam Md Mazharul¹,Hutchins Jack¹,Cady Nathaniel²,Gupta Sumeet³,Rose Garrett¹,Aziz Ahmedullah¹

Affiliation:

1. University of Tennessee,Department of Electrical Engineering and Computer Science,Knoxville,TN,USA,37996

2. College of Nanoscale Science and Engineering, SUNY Polytechnic Institute,Albany,NY,USA,12203

3. School of Electrical and Computer Engineering, Purdue University,West Lafayette,IN,USA,47907

Funder

Air Force Research Laboratory

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9928528/9928587/09928710.pdf?arnumber=9928710

Reference18 articles.

1. COAST: Correlated material assisted STT MRAMs for optimized read operation

2. Read optimized MRAM with separate read-write paths based on concerted operation of magnetic tunnel junction with correlated material

3. Correlated Material Enhanced SRAMs With Robust Low Power Operation

4. A Threshold Switch Augmented Hybrid-FeFET (H-FeFET) with Enhanced Read Distinguishability and Reduced Programming Voltage for Non-Volatile Memory Applications

5. A three-terminal non-volatile ferroelectric switch with an insulator–metal transition channel

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1. Design Space Exploration for Phase Transition Material-Augmented MRAMs With Separate Read-Write Paths;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2024-01

2. Reliable Brain-inspired AI Accelerators using Classical and Emerging Memories;2023 IEEE 41st VLSI Test Symposium (VTS);2023-04-24

3. A Novel Scalable Array Design for III-V Compound Semiconductor-based Nonvolatile Memory (UltraRAM) with Separate Read-Write Paths;2023 24th International Symposium on Quality Electronic Design (ISQED);2023-04-05

4. Design Space Exploration for Threshold Switch Assisted Memristive Memory;IEEE Transactions on Nanotechnology;2023

5. Cryogenic In-Memory Bit-Serial Addition Using Quantum Anomalous Hall Effect-Based Majority Logic;IEEE Access;2023

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