Stochastic Resonance Exploration in Current-driven ReRAM Devices-Reference-Cited by-同舟云学术

Stochastic Resonance Exploration in Current-driven ReRAM Devices

Published:2022-07-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 22nd International Conference on Nanotechnology (NANO)
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Author:

Cirera Albert¹,Vourkas Ioannis²,Rubio Antonio³,Perez Marcelo²

Affiliation:

1. Universitat de Barcelona,Dept. of Electronics and Biomedical Eng.,Barcelona,Spain

2. Universidad Tecnica Federico Santa Maria,Dept. of Electronic Engineering,Valparaiso,Chile

3. Universitat Politècnica de Catalunya,Dept. of Electronic Engineering,Barcelona,Spain

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9928528/9928587/09928748.pdf?arnumber=9928748

Reference20 articles.

1. Theory of stochastic resonance

2. Exploiting the stochasticity of memristive devices for computing,” in “Memristive Devices for Brain-Inspired Computing;mizrahi;Woodhead Publishing Series in Electronic and Optical Materials,2020

3. Changing the state of a memristive system with white noise

4. Power-Efficient Noise-Induced Reduction of ReRAM Cell’s Temporal Variability Effects

5. Stochastic resonance in a metal-oxide memristive device

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