Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states
Author:
Affiliation:
1. Institute of Nanoscience and Nanotechnology, NCSR Demokritos,Agia Paraskevi, Attica,Greece,15341
2. Democritus University of Thrace,Electrical and Computer Engineering Department,Xanthi,Greece,67100
Funder
MIS
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9928528/9928587/09928707.pdf?arnumber=9928707
Reference16 articles.
1. Uniformity Improvement of SiN x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current
2. Effect of nitrogen-accommodation ability of electrodes in SiNx-based resistive switching devices
3. Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis
4. Low-frequency 1/f noise in graphene devices
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