Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology-Reference-Cited by-同舟云学术

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Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology

Published:2015-11 Issue:11 Volume:23 Page:2748-2752
ISSN:1063-8210
Container-title:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
language:
Short-container-title:IEEE Trans. VLSI Syst.

Author:

Yang Younghwi,Park Juhyun,Song Seung Chul,Wang Joseph,Yeap Geoffrey,Jung Seong-Ook

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

http://xplorestaging.ieee.org/ielx7/92/7302619/06963407.pdf?arnumber=6963407

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A fault-tolerant and energy-efficient design of RAM cell and PIM structure in quantum technology;Sustainable Computing: Informatics and Systems;2024-04

2. A CNTFET based stable, single-ended 7T SRAM cell with improved write operation;Physica Scripta;2024-02-09

3. S²RAM: Optimization of SRAM With Memory Access Patterns;IEEE Access;2024

4. Comparative Analysis of Various SRAM Bit Cells for 32 nm Technology Node;Lecture Notes in Networks and Systems;2024

5. Optimized QCA SRAM cell and array in nanoscale based on multiplexer with energy and cost analysis;ADV NANO RES;2023

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