On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related Materials
Author:
Affiliation:
1. Stanford University,Department of Electrical Engineering,Stanford,CA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10310176/10310665/10310817.pdf?arnumber=10310817
Reference21 articles.
1. Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling
2. Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology
3. Low temperature limits of diamond film growth by microwave plasma-assisted CVD
4. Characterization of diamond films synthesized in the microwave plasmas of CO/H2and CO/O2/H2systems at low temperatures (403–1023 K)
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